MMBT2222AHLT1G
For Reference Only
| Part Number | MMBT2222AHLT1G |
| PNEDA Part # | MMBT2222AHLT1G |
| Description | TRANS NPN 40V 0.6A SOT23 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 4,572 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 17 - Mar 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MMBT2222AHLT1G Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | MMBT2222AHLT1G |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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MMBT2222AHLT1G Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Transistor Type | - |
| Current - Collector (Ic) (Max) | - |
| Voltage - Collector Emitter Breakdown (Max) | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Power - Max | - |
| Frequency - Transition | - |
| Operating Temperature | - |
| Mounting Type | - |
| Package / Case | - |
| Supplier Device Package | - |
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Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 300V Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 30mA, 10V Power - Max 225mW Frequency - Transition 50MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 (TO-236) |
Manufacturer ON Semiconductor Series - Transistor Type PNP Current - Collector (Ic) (Max) 800mA Voltage - Collector Emitter Breakdown (Max) 45V Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA Current - Collector Cutoff (Max) 100nA DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 1V Power - Max 625mW Frequency - Transition 260MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN - Darlington Current - Collector (Ic) (Max) 5A Voltage - Collector Emitter Breakdown (Max) 60V Vce Saturation (Max) @ Ib, Ic 4V @ 20mA, 5A Current - Collector Cutoff (Max) 500µA DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 3A, 3V Power - Max 2W Frequency - Transition - Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220-3 |
Manufacturer Bourns Inc. Series - Transistor Type NPN Current - Collector (Ic) (Max) 3A Voltage - Collector Emitter Breakdown (Max) 45V Vce Saturation (Max) @ Ib, Ic 1.2V @ 600mA, 3A Current - Collector Cutoff (Max) 300µA DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 3A, 4V Power - Max 2W Frequency - Transition - Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220 |
