Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

MGSF2N02ELT1G

MGSF2N02ELT1G

For Reference Only

Part Number MGSF2N02ELT1G
PNEDA Part # MGSF2N02ELT1G
Description MOSFET N-CH 20V 2.8A SOT-23
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 28,908
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

MGSF2N02ELT1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberMGSF2N02ELT1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
MGSF2N02ELT1G, MGSF2N02ELT1G Datasheet (Total Pages: 5, Size: 118.15 KB)
PDFMVSF2N02ELT1G Datasheet Cover
MVSF2N02ELT1G Datasheet Page 2 MVSF2N02ELT1G Datasheet Page 3 MVSF2N02ELT1G Datasheet Page 4 MVSF2N02ELT1G Datasheet Page 5

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • MGSF2N02ELT1G Datasheet
  • where to find MGSF2N02ELT1G
  • ON Semiconductor

  • ON Semiconductor MGSF2N02ELT1G
  • MGSF2N02ELT1G PDF Datasheet
  • MGSF2N02ELT1G Stock

  • MGSF2N02ELT1G Pinout
  • Datasheet MGSF2N02ELT1G
  • MGSF2N02ELT1G Supplier

  • ON Semiconductor Distributor
  • MGSF2N02ELT1G Price
  • MGSF2N02ELT1G Distributor

MGSF2N02ELT1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs85mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs3.5nC @ 4V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds150pF @ 5V
FET Feature-
Power Dissipation (Max)1.25W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3

The Products You May Be Interested In

SIRA04DP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2.15mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

77nC @ 10V

Vgs (Max)

+20V, -16V

Input Capacitance (Ciss) (Max) @ Vds

3595pF @ 15V

FET Feature

-

Power Dissipation (Max)

5W (Ta), 62.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

IRF5305SPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

31A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

60mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

63nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1200pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 110W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IXTH30N25

IXYS

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

75mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

136nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3950pF @ 25V

FET Feature

-

Power Dissipation (Max)

200W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 (IXTH)

Package / Case

TO-247-3

IRFU12N25D

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

14A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

260mOhm @ 8.4A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

35nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

810pF @ 25V

FET Feature

-

Power Dissipation (Max)

144W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

IPAK (TO-251)

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

SI4464DY-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

1.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

240mOhm @ 2.2A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

Recently Sold

LTC2855IDE

LTC2855IDE

Linear Technology/Analog Devices

IC TRANSCEIVER FULL 1/1 12DFN

ISL6124IRZA-T

ISL6124IRZA-T

Renesas Electronics America Inc.

IC POWER SUPPLY SEQUENCER 24QFN

LIS3MDLTR

LIS3MDLTR

STMicroelectronics

SENSOR MR I2C/SPI 12LGA

AMT102-V

AMT102-V

CUI

ROTARY ENCODER INCREMENT PROGPPR

NE3509M04-A

NE3509M04-A

CEL

FET RF 4V 2GHZ 4-SMINI

B360B-13-F

B360B-13-F

Diodes Incorporated

DIODE SCHOTTKY 60V 3A SMB

SMBJ5.0CA-13-F

SMBJ5.0CA-13-F

Diodes Incorporated

TVS DIODE 5V 9.2V SMB

ATMEGA32U2-AU

ATMEGA32U2-AU

Microchip Technology

IC MCU 8BIT 32KB FLASH 32TQFP

W25Q256JVCIQ

W25Q256JVCIQ

Winbond Electronics

IC FLASH 256M SPI 24TFBGA

EEE-FK1J220P

EEE-FK1J220P

Panasonic Electronic Components

CAP ALUM 22UF 20% 63V SMD

SI2301CDS-T1-GE3

SI2301CDS-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 3.1A SOT23-3

GRM43ER71A226KE01L

GRM43ER71A226KE01L

Murata

CAP CER 22UF 10V X7R 1812