MBRTA80035L
For Reference Only
| Part Number | MBRTA80035L |
| PNEDA Part # | MBRTA80035L |
| Description | DIODE SCHOTTKY 35V 400A 3TOWER |
| Manufacturer | GeneSiC Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 7,110 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 9 - Apr 14 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MBRTA80035L Resources
| Brand | GeneSiC Semiconductor |
| ECAD Module |
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| Mfr. Part Number | MBRTA80035L |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Arrays |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- Orders cannot be canceled after shipping the packages.
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MBRTA80035L Specifications
| Manufacturer | GeneSiC Semiconductor |
| Series | - |
| Diode Configuration | 1 Pair Common Cathode |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 35V |
| Current - Average Rectified (Io) (per Diode) | 400A |
| Voltage - Forward (Vf) (Max) @ If | 600mV @ 400A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 3mA @ 35V |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Mounting Type | Chassis Mount |
| Package / Case | Three Tower |
| Supplier Device Package | Three Tower |
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Manufacturer Vishay Semiconductor Diodes Division Series - Diode Configuration 1 Pair Common Cathode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 15V Current - Average Rectified (Io) (per Diode) 220A Voltage - Forward (Vf) (Max) @ If 490mV @ 220A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 40mA @ 15V Operating Temperature - Junction -55°C ~ 125°C Mounting Type Chassis Mount Package / Case TO-244AB Supplier Device Package TO-244AB |
Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Cathode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 30V Current - Average Rectified (Io) (per Diode) 150A Voltage - Forward (Vf) (Max) @ If 580mV @ 150A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 3mA @ 30V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Three Tower Supplier Device Package Three Tower |
