MBRB16H35HE3_A/I
For Reference Only
| Part Number | MBRB16H35HE3_A/I |
| PNEDA Part # | MBRB16H35HE3_A-I |
| Description | DIODE SCHOTTKY 35V 16A TO263AB |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 3,258 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 7 - Apr 12 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MBRB16H35HE3_A/I Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | MBRB16H35HE3_A/I |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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MBRB16H35HE3_A/I Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | Automotive, AEC-Q101 |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 35V |
| Current - Average Rectified (Io) | 16A |
| Voltage - Forward (Vf) (Max) @ If | 660mV @ 16A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 100µA @ 35V |
| Capacitance @ Vr, F | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | TO-263AB |
| Operating Temperature - Junction | -65°C ~ 175°C |
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Manufacturer Sanken Series * Diode Type - Voltage - DC Reverse (Vr) (Max) - Current - Average Rectified (Io) - Voltage - Forward (Vf) (Max) @ If - Speed - Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr - Capacitance @ Vr, F - Mounting Type - Package / Case - Supplier Device Package - Operating Temperature - Junction - |
Manufacturer Infineon Technologies Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 970A Voltage - Forward (Vf) (Max) @ If 970mV @ 750A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 20mA @ 600V Capacitance @ Vr, F - Mounting Type Chassis Mount Package / Case DO-200AA, A-PUK Supplier Device Package - Operating Temperature - Junction -40°C ~ 180°C |
Manufacturer Powerex Inc. Series - Diode Type Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 100A Voltage - Forward (Vf) (Max) @ If 2.7V @ 100A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 300ns Current - Reverse Leakage @ Vr 45mA @ 600V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-205AA, DO-8, Stud Supplier Device Package DO-205AA (DO-8) Operating Temperature - Junction -40°C ~ 150°C |
Manufacturer Vishay Semiconductor Diodes Division Series Automotive, AEC-Q101, eSMP® Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 40V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 550mV @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 200µA @ 40V Capacitance @ Vr, F 50pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-219AD Supplier Device Package MicroSMP (DO-219AD) Operating Temperature - Junction -55°C ~ 150°C |
