MBRB10H100CTHE3/45
For Reference Only
| Part Number | MBRB10H100CTHE3/45 |
| PNEDA Part # | MBRB10H100CTHE3-45 |
| Description | DIODE ARRAY SCHOTTKY 100V TO263 |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 2,736 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 5 - Apr 10 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MBRB10H100CTHE3/45 Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | MBRB10H100CTHE3/45 |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Arrays |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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MBRB10H100CTHE3/45 Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | - |
| Diode Configuration | 1 Pair Common Cathode |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Current - Average Rectified (Io) (per Diode) | 5A |
| Voltage - Forward (Vf) (Max) @ If | 760mV @ 5A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 3.5µA @ 100V |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | TO-263AB |
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Manufacturer Infineon Technologies Series - Diode Configuration 1 Pair Common Cathode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 30V Current - Average Rectified (Io) (per Diode) 200mA (DC) Voltage - Forward (Vf) (Max) @ If 800mV @ 100mA Speed Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr) 5ns Current - Reverse Leakage @ Vr 2µA @ 25V Operating Temperature - Junction 150°C (Max) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |
Manufacturer Microsemi Corporation Series - Diode Configuration 2 Independent Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) (per Diode) 90A Voltage - Forward (Vf) (Max) @ If 1.8V @ 90A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 1800µA @ 600V Operating Temperature - Junction -40°C ~ 175°C Mounting Type Chassis Mount Package / Case SP1 Supplier Device Package SP1 |
