MBR6080R
For Reference Only
| Part Number | MBR6080R |
| PNEDA Part # | MBR6080R |
| Description | DIODE SCHOTTKY REV 80V DO5 |
| Manufacturer | GeneSiC Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 4,302 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MBR6080R Resources
| Brand | GeneSiC Semiconductor |
| ECAD Module |
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| Mfr. Part Number | MBR6080R |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
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- Orders cannot be canceled after shipping the packages.
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MBR6080R Specifications
| Manufacturer | GeneSiC Semiconductor |
| Series | - |
| Diode Type | Schottky, Reverse Polarity |
| Voltage - DC Reverse (Vr) (Max) | 80V |
| Current - Average Rectified (Io) | 60A |
| Voltage - Forward (Vf) (Max) @ If | 840mV @ 60A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 5mA @ 20V |
| Capacitance @ Vr, F | - |
| Mounting Type | Chassis, Stud Mount |
| Package / Case | DO-203AB, DO-5, Stud |
| Supplier Device Package | DO-5 |
| Operating Temperature - Junction | -65°C ~ 150°C |
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Manufacturer Infineon Technologies Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 9000V Current - Average Rectified (Io) 760A Voltage - Forward (Vf) (Max) @ If 3.2V @ 1200A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 50mA @ 9000V Capacitance @ Vr, F - Mounting Type Chassis Mount Package / Case DO-200AB, B-PUK Supplier Device Package - Operating Temperature - Junction -40°C ~ 160°C |
Manufacturer Semtech Corporation Series - Diode Type Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) 120A Voltage - Forward (Vf) (Max) @ If 1.35V @ 100A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 150ns Current - Reverse Leakage @ Vr 12µA @ 400V Capacitance @ Vr, F - Mounting Type Stud Mount Package / Case Module Supplier Device Package - Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer GeneSiC Semiconductor Series - Diode Type Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 200A Voltage - Forward (Vf) (Max) @ If 920mV @ 200A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 200V Capacitance @ Vr, F - Mounting Type Chassis Mount Package / Case D-67 Supplier Device Package D-67 Operating Temperature - Junction -55°C ~ 150°C |
