MBR40H35CT-E3/45
For Reference Only
| Part Number | MBR40H35CT-E3/45 |
| PNEDA Part # | MBR40H35CT-E3-45 |
| Description | DIODE ARRAY SCHOTTKY 35V TO220AB |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 4,968 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 20 - Mar 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MBR40H35CT-E3/45 Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | MBR40H35CT-E3/45 |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Arrays |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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MBR40H35CT-E3/45 Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | - |
| Diode Configuration | 1 Pair Common Cathode |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 35V |
| Current - Average Rectified (Io) (per Diode) | 20A |
| Voltage - Forward (Vf) (Max) @ If | 640mV @ 20A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 100µA @ 35V |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220AB |
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Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Anode Diode Type Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max) 35V Current - Average Rectified (Io) (per Diode) 300A (DC) Voltage - Forward (Vf) (Max) @ If 750mV @ 150A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 20V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Three Tower Supplier Device Package Three Tower |
Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Anode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 60V Current - Average Rectified (Io) (per Diode) 200A (DC) Voltage - Forward (Vf) (Max) @ If 800mV @ 100A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 20V Operating Temperature - Junction - Mounting Type Chassis Mount Package / Case Three Tower Supplier Device Package Three Tower |
