MAX2601ESA+T
For Reference Only
| Part Number | MAX2601ESA+T |
| PNEDA Part # | MAX2601ESA-T |
| Description | RF TRANS NPN 15V 1GHZ 8SOIC |
| Manufacturer | Maxim Integrated |
| Unit Price | Request a Quote |
| In Stock | 4,698 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MAX2601ESA+T Resources
| Brand | Maxim Integrated |
| ECAD Module |
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| Mfr. Part Number | MAX2601ESA+T |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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MAX2601ESA+T Specifications
| Manufacturer | Maxim Integrated |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| Frequency - Transition | 1GHz |
| Noise Figure (dB Typ @ f) | 3.3dB @ 836MHz |
| Gain | 11.6dB |
| Power - Max | 6.4W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 250mA, 3V |
| Current - Collector (Ic) (Max) | 1.2A |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
| Supplier Device Package | 8-SOIC-EP |
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Manufacturer Microsemi Corporation Series - Transistor Type - Voltage - Collector Emitter Breakdown (Max) - Frequency - Transition - Noise Figure (dB Typ @ f) - Gain - Power - Max - DC Current Gain (hFE) (Min) @ Ic, Vce - Current - Collector (Ic) (Max) - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
Manufacturer Renesas Electronics America Inc. Series - Transistor Type 6 NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 10GHz Noise Figure (dB Typ @ f) 1.8dB ~ 2.1dB @ 500MHz ~ 1GHz Gain 12.4dB ~ 17.5dB Power - Max 250mW DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 10mA, 3V Current - Collector (Ic) (Max) 30mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 14-SOIC (0.154", 3.90mm Width) Supplier Device Package 14-SOIC |
Manufacturer Microsemi Corporation Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 65V Frequency - Transition 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f) - Gain 7dB ~ 7.1dB Power - Max 720W DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 1A, 5V Current - Collector (Ic) (Max) 19.8A Operating Temperature 200°C (TJ) Mounting Type Chassis Mount Package / Case M218 Supplier Device Package M218 |
Manufacturer Infineon Technologies Series - Transistor Type 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 8GHz Noise Figure (dB Typ @ f) 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz Gain 19dB Power - Max 450mW DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 15mA, 8V Current - Collector (Ic) (Max) 65mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 6-VSSOP, SC-88, SOT-363 Supplier Device Package PG-SOT363-6 |
