M58BW016FB7T3T TR
For Reference Only
| Part Number | M58BW016FB7T3T TR |
| PNEDA Part # | M58BW016FB7T3T-TR |
| Description | IC FLASH 16M PARALLEL 80PQFP |
| Manufacturer | Micron Technology Inc. |
| Unit Price | Request a Quote |
| In Stock | 2,880 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 4 - Apr 9 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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M58BW016FB7T3T TR Resources
| Brand | Micron Technology Inc. |
| ECAD Module |
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| Mfr. Part Number | M58BW016FB7T3T TR |
| Category | Semiconductors › Memory ICs › Memory |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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M58BW016FB7T3T TR Specifications
| Manufacturer | Micron Technology Inc. |
| Series | - |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 16Mb (512K x 32) |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | - |
| Access Time | 70ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 80-BQFP |
| Supplier Device Package | 80-PQFP (19.9x13.9) |
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Manufacturer ISSI, Integrated Silicon Solution Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Asynchronous Memory Size 3Mb (128K x 24) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 8ns Access Time 8ns Voltage - Supply 3.135V ~ 3.6V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount Package / Case 100-LQFP Supplier Device Package 100-TQFP (14x20) |
