M29W640GL70ZA6E
For Reference Only
| Part Number | M29W640GL70ZA6E |
| PNEDA Part # | M29W640GL70ZA6E |
| Description | IC FLASH 64M PARALLEL 48TFBGA |
| Manufacturer | Micron Technology Inc. |
| Unit Price | Request a Quote |
| In Stock | 2,826 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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M29W640GL70ZA6E Resources
| Brand | Micron Technology Inc. |
| ECAD Module |
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| Mfr. Part Number | M29W640GL70ZA6E |
| Category | Semiconductors › Memory ICs › Memory |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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M29W640GL70ZA6E Specifications
| Manufacturer | Micron Technology Inc. |
| Series | - |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 64Mb (8M x 8, 4M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 70ns |
| Access Time | 70ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 48-TFBGA |
| Supplier Device Package | 48-TFBGA (6x8) |
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Manufacturer Cypress Semiconductor Corp Series GL-N Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NOR Memory Size 64Mb (8M x 8, 4M x 16) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 90ns Access Time 90ns Voltage - Supply 2.7V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package 48-TSOP |
Manufacturer Micron Technology Inc. Series - Memory Type Non-Volatile Memory Format FLASH, RAM Technology FLASH - NAND, Mobile LPDRAM Memory Size 1Gb (128M x 8)(NAND), 512M (16M x 32)(LPDRAM) Memory Interface Parallel Clock Frequency 200MHz Write Cycle Time - Word, Page - Access Time - Voltage - Supply 1.7V ~ 1.95V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 130-VFBGA Supplier Device Package 130-VFBGA (8x9) |
Manufacturer Cypress Semiconductor Corp Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR Memory Size 36Mb (1M x 36) Memory Interface Parallel Clock Frequency 250MHz Write Cycle Time - Word, Page - Access Time 2.6ns Voltage - Supply 3.135V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 100-LQFP Supplier Device Package 100-TQFP (14x20) |
Manufacturer Cypress Semiconductor Corp Series MoBL® Memory Type Volatile Memory Format SRAM Technology SRAM - Asynchronous Memory Size 8Mb (512K x 16) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 45ns Access Time 45ns Voltage - Supply 2.2V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package 48-TSOP I |
Manufacturer IDT, Integrated Device Technology Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Dual Port, Asynchronous Memory Size 8Kb (1K x 8) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 25ns Access Time 25ns Voltage - Supply 4.5V ~ 5.5V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 64-LQFP Supplier Device Package 64-TQFP (14x14) |
