M29W640GH7ANB6E
For Reference Only
| Part Number | M29W640GH7ANB6E |
| PNEDA Part # | M29W640GH7ANB6E |
| Description | IC FLASH 64M PARALLEL 56TSOP |
| Manufacturer | Micron Technology Inc. |
| Unit Price | Request a Quote |
| In Stock | 7,344 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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M29W640GH7ANB6E Resources
| Brand | Micron Technology Inc. |
| ECAD Module |
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| Mfr. Part Number | M29W640GH7ANB6E |
| Category | Semiconductors › Memory ICs › Memory |
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- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- Orders cannot be canceled after shipping the packages.
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M29W640GH7ANB6E Specifications
| Manufacturer | Micron Technology Inc. |
| Series | - |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 64Mb (8M x 8, 4M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 70ns |
| Access Time | 70ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 56-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package | 56-TSOP |
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Manufacturer Micron Technology Inc. Series - Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NOR Memory Size 128Mb (16M x 8) Memory Interface SPI Clock Frequency 133MHz Write Cycle Time - Word, Page 8ms, 2.8ms Access Time - Voltage - Supply 2.7V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 8-SOIC (0.209", 5.30mm Width) Supplier Device Package 8-SO |
Manufacturer Cypress Semiconductor Corp Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Dual Port, Synchronous Memory Size 9Mb (128K x 72) Memory Interface Parallel Clock Frequency 200MHz Write Cycle Time - Word, Page - Access Time 3.3ns Voltage - Supply 1.42V ~ 1.58V, 1.7V ~ 1.9V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 256-LBGA Supplier Device Package 256-FBGA (17x17) |
