LSM835GE3/TR13
For Reference Only
| Part Number | LSM835GE3/TR13 |
| PNEDA Part # | LSM835GE3-TR13 |
| Description | DIODE SCHOTTKY 35V 8A DO215AB |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 7,488 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 17 - Mar 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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LSM835GE3/TR13 Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | LSM835GE3/TR13 |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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LSM835GE3/TR13 Specifications
| Manufacturer | Microsemi Corporation |
| Series | - |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 35V |
| Current - Average Rectified (Io) | 8A |
| Voltage - Forward (Vf) (Max) @ If | 520mV @ 8A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 2mA @ 35V |
| Capacitance @ Vr, F | - |
| Mounting Type | Surface Mount |
| Package / Case | DO-215AB, SMC Gull Wing |
| Supplier Device Package | DO-215AB |
| Operating Temperature - Junction | -55°C ~ 150°C |
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Manufacturer Toshiba Semiconductor and Storage Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 30V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 360mV @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 100µA @ 30V Capacitance @ Vr, F 82pF @ 10V, 1MHz Mounting Type Surface Mount Package / Case SOD-123F Supplier Device Package S-FLAT (1.6x3.5) Operating Temperature - Junction 150°C (Max) |
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