L6399DTR
For Reference Only
| Part Number | L6399DTR |
| PNEDA Part # | L6399DTR |
| Description | IC GATE DRVR HALF-BRIDGE 8SO |
| Manufacturer | STMicroelectronics |
| Unit Price | Request a Quote |
| In Stock | 6,948 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Feb 18 - Feb 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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L6399DTR Resources
| Brand | STMicroelectronics |
| ECAD Module |
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| Mfr. Part Number | L6399DTR |
| Category | Semiconductors › Power Management ICs › PMIC - Gate Drivers |
| Datasheet |
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L6399DTR Specifications
| Manufacturer | STMicroelectronics |
| Series | - |
| Driven Configuration | Half-Bridge |
| Channel Type | Independent |
| Number of Drivers | 2 |
| Gate Type | IGBT, N-Channel MOSFET |
| Voltage - Supply | 10V ~ 20V |
| Logic Voltage - VIL, VIH | 1.1V, 1.9V |
| Current - Peak Output (Source, Sink) | 290mA, 430mA |
| Input Type | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 600V |
| Rise / Fall Time (Typ) | 75ns, 35ns |
| Operating Temperature | -40°C ~ 125°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
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Manufacturer Series - Driven Configuration Low-Side Channel Type Single Number of Drivers 1 Gate Type IGBT, N-Channel MOSFET Voltage - Supply 4.7V ~ 18V Logic Voltage - VIL, VIH 0.8V, 2V Current - Peak Output (Source, Sink) 6A, 6A Input Type Inverting, Non-Inverting High Side Voltage - Max (Bootstrap) - Rise / Fall Time (Typ) 85ns, 85ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-5 Supplier Device Package TO-220-5 |
Manufacturer STMicroelectronics Series - Driven Configuration High-Side Channel Type Single Number of Drivers 1 Gate Type IGBT, N-Channel MOSFET Voltage - Supply 12V ~ 26V Logic Voltage - VIL, VIH 0.8V, 4.2V Current - Peak Output (Source, Sink) 1.3A, 1.7A Input Type Non-Inverting High Side Voltage - Max (Bootstrap) - Rise / Fall Time (Typ) 100ns, 100ns (Max) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case 8-DIP (0.300", 7.62mm) Supplier Device Package 8-DIP |
Manufacturer Renesas Electronics America Inc. Series - Driven Configuration Half-Bridge Channel Type Independent Number of Drivers 2 Gate Type N-Channel MOSFET Voltage - Supply 9V ~ 14V Logic Voltage - VIL, VIH 1.4V, 2.2V Current - Peak Output (Source, Sink) 1.25A, 1.25A Input Type Non-Inverting High Side Voltage - Max (Bootstrap) 100V Rise / Fall Time (Typ) 16ns, 16ns Operating Temperature -40°C ~ 125°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOIC |
