KSD2012YYDTU
For Reference Only
| Part Number | KSD2012YYDTU |
| PNEDA Part # | KSD2012YYDTU |
| Description | TRANS NPN 60V 3A TO-220F |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 8,982 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 4 - Apr 9 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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KSD2012YYDTU Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | KSD2012YYDTU |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
| Datasheet |
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KSD2012YYDTU Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 3A |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA, 5V |
| Power - Max | 25W |
| Frequency - Transition | 3MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack, Formed Leads |
| Supplier Device Package | TO-220F-3 (Y-Forming) |
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Manufacturer Micro Commercial Co Series - Transistor Type PNP Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 55V Vce Saturation (Max) @ Ib, Ic 500mV @ 1mA, 10mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 400 @ 2mA, 12V Power - Max 300mW Frequency - Transition 200MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92 |
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