KSC3502ESTU
For Reference Only
| Part Number | KSC3502ESTU |
| PNEDA Part # | KSC3502ESTU |
| Description | TRANS NPN 200V 0.1A TO-126 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 4,140 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 16 - Mar 21 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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KSC3502ESTU Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | KSC3502ESTU |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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KSC3502ESTU Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 200V |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 2mA, 20mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 10V |
| Power - Max | 1.2W |
| Frequency - Transition | 150MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-225AA, TO-126-3 |
| Supplier Device Package | TO-126-3 |
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Manufacturer Sanken Series - Transistor Type NPN Current - Collector (Ic) (Max) 10A Voltage - Collector Emitter Breakdown (Max) 140V Vce Saturation (Max) @ Ib, Ic 500mV @ 500mA, 5A Current - Collector Cutoff (Max) 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 3A, 4V Power - Max 100W Frequency - Transition 20MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-3P-3, SC-65-3 Supplier Device Package TO-3P |
Manufacturer Sanken Series - Transistor Type NPN Current - Collector (Ic) (Max) 17A Voltage - Collector Emitter Breakdown (Max) 200V Vce Saturation (Max) @ Ib, Ic 2.5V @ 1A, 10A Current - Collector Cutoff (Max) 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 8A, 4V Power - Max 200W Frequency - Transition 20MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case 3-ESIP Supplier Device Package MT-200 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 800mA Voltage - Collector Emitter Breakdown (Max) 45V Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA Current - Collector Cutoff (Max) 100nA DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA, 1V Power - Max 625mW Frequency - Transition 100MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
