KSC1730OBU
For Reference Only
| Part Number | KSC1730OBU |
| PNEDA Part # | KSC1730OBU |
| Description | RF TRANS NPN 15V 1.1GHZ TO92-3 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 8,892 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 30 - Apr 4 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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KSC1730OBU Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | KSC1730OBU |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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KSC1730OBU Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| Frequency - Transition | 1.1GHz |
| Noise Figure (dB Typ @ f) | - |
| Gain | - |
| Power - Max | 250mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 10V |
| Current - Collector (Ic) (Max) | 50mA |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package | TO-92-3 |
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Manufacturer Infineon Technologies Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 5V Frequency - Transition 30GHz Noise Figure (dB Typ @ f) 0.9dB ~ 1.4dB @ 1.8GHz Gain 21.5dB Power - Max 250mW DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 20mA, 3.5V Current - Collector (Ic) (Max) 80mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SC-82A, SOT-343 Supplier Device Package PG-SOT343-4 |
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Manufacturer Microsemi Corporation Series - Transistor Type - Voltage - Collector Emitter Breakdown (Max) - Frequency - Transition - Noise Figure (dB Typ @ f) - Gain - Power - Max - DC Current Gain (hFE) (Min) @ Ic, Vce - Current - Collector (Ic) (Max) - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
Manufacturer Microsemi Corporation Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 55V Frequency - Transition 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f) - Gain 6.5dB Power - Max 375W DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 300mA, 5V Current - Collector (Ic) (Max) 30A Operating Temperature 200°C (TJ) Mounting Type Chassis Mount Package / Case 55AW Supplier Device Package 55AW |
