KSA709CGBU
For Reference Only
| Part Number | KSA709CGBU |
| PNEDA Part # | KSA709CGBU |
| Description | TRANS PNP 150V 0.7A TO-92 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 7,614 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 16 - Mar 21 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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KSA709CGBU Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | KSA709CGBU |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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KSA709CGBU Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 700mA |
| Voltage - Collector Emitter Breakdown (Max) | 150V |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 20mA, 200mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 50mA, 2V |
| Power - Max | 800mW |
| Frequency - Transition | 50MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package | TO-92-3 |
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Manufacturer Infineon Technologies Series - Transistor Type NPN Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 30V Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA Current - Collector Cutoff (Max) 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V Power - Max 250mW Frequency - Transition 250MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SC-70, SOT-323 Supplier Device Package PG-SOT323-3 |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type NPN Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 1A Current - Collector Cutoff (Max) 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 500mA, 2V Power - Max 900mW Frequency - Transition 100MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Long Body Supplier Device Package TO-92MOD |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 5A Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 300mV @ 300mA, 3A Current - Collector Cutoff (Max) 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1A, 2V Power - Max 1.75W Frequency - Transition 30MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220-3 |
