JTDB75
For Reference Only
| Part Number | JTDB75 |
| PNEDA Part # | JTDB75 |
| Description | RF TRANS NPN 55V 1.215GHZ 55AW |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 5,382 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 4 - Apr 9 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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JTDB75 Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | JTDB75 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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JTDB75 Specifications
| Manufacturer | Microsemi Corporation |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 55V |
| Frequency - Transition | 960MHz ~ 1.215GHz |
| Noise Figure (dB Typ @ f) | - |
| Gain | 7dB ~ 8.2dB |
| Power - Max | 220W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 1A, 5V |
| Current - Collector (Ic) (Max) | 8A |
| Operating Temperature | 200°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | 55AW |
| Supplier Device Package | 55AW |
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Manufacturer CEL Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 6V Frequency - Transition 12GHz Noise Figure (dB Typ @ f) 1.5dB ~ 2.5dB @ 2GHz Gain 7dB Power - Max 150mW DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 10mA, 3V Current - Collector (Ic) (Max) 30mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SC-70, SOT-323 Supplier Device Package SOT-323 |
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Manufacturer NXP USA Inc. Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 15V Frequency - Transition 5GHz Noise Figure (dB Typ @ f) 2dB ~ 3dB @ 1GHz ~ 2GHz Gain - Power - Max 300mW DC Current Gain (hFE) (Min) @ Ic, Vce 65 @ 15mA, 10V Current - Collector (Ic) (Max) 25mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SC-70, SOT-323 Supplier Device Package SOT-323-3 |
Manufacturer Infineon Technologies Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 15V Frequency - Transition 5GHz Noise Figure (dB Typ @ f) 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz Gain 11.5dB ~ 17dB Power - Max 280mW DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 15mA, 8V Current - Collector (Ic) (Max) 45mA Operating Temperature - Mounting Type Surface Mount Package / Case SC-70, SOT-323 Supplier Device Package PG-SOT323-3 |
