JANTXV2N5012S
For Reference Only
| Part Number | JANTXV2N5012S |
| PNEDA Part # | JANTXV2N5012S |
| Description | NPN TRANSISTOR |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 5,886 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 2 - Apr 7 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
JANTXV2N5012S Resources
| Brand | Microsemi |
| ECAD Module |
|
| Mfr. Part Number | JANTXV2N5012S |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- JANTXV2N5012S Datasheet
- where to find JANTXV2N5012S
- Microsemi
- Microsemi JANTXV2N5012S
- JANTXV2N5012S PDF Datasheet
- JANTXV2N5012S Stock
- JANTXV2N5012S Pinout
- Datasheet JANTXV2N5012S
- JANTXV2N5012S Supplier
- Microsemi Distributor
- JANTXV2N5012S Price
- JANTXV2N5012S Distributor
JANTXV2N5012S Specifications
| Manufacturer | Microsemi Corporation |
| Series | Military, MIL-PRF-19500/727 |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 200mA |
| Voltage - Collector Emitter Breakdown (Max) | 700V |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 25mA, 10V |
| Power - Max | 1W |
| Frequency - Transition | - |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Supplier Device Package | TO-39 (TO-205AD) |
The Products You May Be Interested In
|
Manufacturer ON Semiconductor Series - Transistor Type PNP Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 60V Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 2V Power - Max 1W Frequency - Transition 100MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
Manufacturer Diodes Incorporated Series - Transistor Type PNP Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 45V Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA Current - Collector Cutoff (Max) 100nA DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA, 1V Power - Max 310mW Frequency - Transition 100MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |
Manufacturer Taiwan Semiconductor Corporation Series - Transistor Type NPN Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 45V Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 100mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V Power - Max 200mW Frequency - Transition 100MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23 |
Manufacturer ON Semiconductor Series - Transistor Type PNP - Darlington Current - Collector (Ic) (Max) 1.2A Voltage - Collector Emitter Breakdown (Max) 30V Vce Saturation (Max) @ Ib, Ic 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA, 5V Power - Max 625mW Frequency - Transition 125MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type PNP Current - Collector (Ic) (Max) 2A Voltage - Collector Emitter Breakdown (Max) 35V Vce Saturation (Max) @ Ib, Ic 310mV @ 20mA, 2A Current - Collector Cutoff (Max) 100nA DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1.5A, 1.5V Power - Max 625mW Frequency - Transition 100MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-23-6 Supplier Device Package 6-TSOP |
