JANTXV2N3440
For Reference Only
| Part Number | JANTXV2N3440 |
| PNEDA Part # | JANTXV2N3440 |
| Description | TRANS NPN 250V 1A |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 2,502 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 27 - Dec 2 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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JANTXV2N3440 Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | JANTXV2N3440 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- Orders cannot be canceled after shipping the packages.
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JANTXV2N3440 Specifications
| Manufacturer | Microsemi Corporation |
| Series | Military, MIL-PRF-19500/368 |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 1A |
| Voltage - Collector Emitter Breakdown (Max) | 250V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 4mA, 50mA |
| Current - Collector Cutoff (Max) | 2µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 20mA, 10V |
| Power - Max | 800mW |
| Frequency - Transition | - |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Supplier Device Package | TO-39 |
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Manufacturer Central Semiconductor Corp Series - Transistor Type NPN Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 300V Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 30mA, 10V Power - Max 1.8W Frequency - Transition 50MHz Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Through Hole Package / Case TO-206AA, TO-18-3 Metal Can Supplier Device Package TO-18 |
Manufacturer Infineon Technologies Series - Transistor Type PNP Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 25V Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA, 1V Power - Max 250mW Frequency - Transition 200MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SC-70, SOT-323 Supplier Device Package PG-SOT323-3 |
