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JANTX2N4957

JANTX2N4957

For Reference Only

Part Number JANTX2N4957
PNEDA Part # JANTX2N4957
Description RF TRANS PNP 30V 30MA TO72
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 2,088
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 2 - Apr 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

JANTX2N4957 Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberJANTX2N4957
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - RF

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JANTX2N4957 Specifications

ManufacturerMicrosemi Corporation
Series-
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)30V
Frequency - Transition-
Noise Figure (dB Typ @ f)3.5dB @ 450MHz
Gain25dB
Power - Max200mW
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA, 10V
Current - Collector (Ic) (Max)30mA
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-72-3 Metal Can
Supplier Device PackageTO-72

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Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

5.5V

Frequency - Transition

18GHz

Noise Figure (dB Typ @ f)

0.6dB ~ 0.7dG @ 1.5GHz ~ 2.4GHz

Gain

15.5dB ~ 18.5dB

Power - Max

230mW

DC Current Gain (hFE) (Min) @ Ic, Vce

90 @ 20mA, 2V

Current - Collector (Ic) (Max)

100mA

Operating Temperature

150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

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Transistor Type

2 NPN (Dual)

Voltage - Collector Emitter Breakdown (Max)

5V, 10V

Frequency - Transition

22GHz, 9GHz

Noise Figure (dB Typ @ f)

1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz

Gain

14.5dB

Power - Max

200mW, 250mW

DC Current Gain (hFE) (Min) @ Ic, Vce

130 @ 20mA, 3V / 100 @ 5mA, 3V

Current - Collector (Ic) (Max)

50mA, 70mA

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-XFDFN

Supplier Device Package

TSLP-6-1

MS1337

Microsemi

Manufacturer

Microsemi Corporation

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

18V

Frequency - Transition

175MHz

Noise Figure (dB Typ @ f)

-

Gain

10dB

Power - Max

70W

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 250mA, 5V

Current - Collector (Ic) (Max)

8A

Operating Temperature

200°C (TJ)

Mounting Type

Chassis Mount

Package / Case

M113

Supplier Device Package

M113

BFU580QX

NXP

Manufacturer

NXP USA Inc.

Series

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Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

12V

Frequency - Transition

10.5GHz

Noise Figure (dB Typ @ f)

1.3dB @ 1.8GHz

Gain

8.5dB

Power - Max

1W

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 30mA, 8V

Current - Collector (Ic) (Max)

60mA

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

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Supplier Device Package

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Microsemi Corporation

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

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Noise Figure (dB Typ @ f)

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Gain

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Power - Max

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Current - Collector (Ic) (Max)

-

Operating Temperature

-

Mounting Type

-

Package / Case

-

Supplier Device Package

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