JANTX2N3811L
For Reference Only
| Part Number | JANTX2N3811L |
| PNEDA Part # | JANTX2N3811L |
| Description | TRANS 2PNP 60V 0.05A |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 7,398 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 6 - Apr 11 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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JANTX2N3811L Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | JANTX2N3811L |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Arrays |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- Orders cannot be canceled after shipping the packages.
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JANTX2N3811L Specifications
| Manufacturer | Microsemi Corporation |
| Series | Military, MIL-PRF-19500/336 |
| Transistor Type | 2 PNP (Dual) |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 100µA, 1mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 1mA, 5V |
| Power - Max | 350mW |
| Frequency - Transition | - |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-78-6 Metal Can |
| Supplier Device Package | TO-78-6 |
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Manufacturer Microsemi Corporation Series Military, MIL-PRF-19500/336 Transistor Type 2 PNP (Dual) Current - Collector (Ic) (Max) 50mA Voltage - Collector Emitter Breakdown (Max) 60V Vce Saturation (Max) @ Ib, Ic 250mV @ 100µA, 1mA Current - Collector Cutoff (Max) 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 1mA, 5V Power - Max 350mW Frequency - Transition - Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Through Hole Package / Case TO-78-6 Metal Can Supplier Device Package TO-78-6 |
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Manufacturer Rohm Semiconductor Series - Transistor Type 2 PNP (Dual) Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 12V Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 200mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 10mA, 2V Power - Max 150mW Frequency - Transition 260MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-563, SOT-666 Supplier Device Package EMT6 |
Manufacturer Nexperia USA Inc. Series Automotive, AEC-Q101 Transistor Type 2 PNP (Dual) Current - Collector (Ic) (Max) 200mA Voltage - Collector Emitter Breakdown (Max) 40V Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA Current - Collector Cutoff (Max) 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V Power - Max 360mW Frequency - Transition 250MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-563, SOT-666 Supplier Device Package SOT-666 |
Manufacturer Panasonic Electronic Components Series - Transistor Type 2 NPN (Dual) Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA Current - Collector Cutoff (Max) 100µA DC Current Gain (hFE) (Min) @ Ic, Vce 210 @ 2mA, 10V Power - Max 300mW Frequency - Transition 150MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-23-6 Supplier Device Package Mini6-G4-B |
