JANS2N5415
For Reference Only
| Part Number | JANS2N5415 |
| PNEDA Part # | JANS2N5415 |
| Description | TRANS PNP 200V 1A TO-5 |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 3,564 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 4 - Apr 9 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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JANS2N5415 Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | JANS2N5415 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
Payment Method
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- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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JANS2N5415 Specifications
| Manufacturer | Microsemi Corporation |
| Series | Military, MIL-PRF-19500/485 |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 1A |
| Voltage - Collector Emitter Breakdown (Max) | 200V |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 50mA, 10V |
| Power - Max | 750mW |
| Frequency - Transition | - |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Supplier Device Package | TO-5 |
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Manufacturer Bourns Inc. Series - Transistor Type PNP Current - Collector (Ic) (Max) 10A Voltage - Collector Emitter Breakdown (Max) 60V Vce Saturation (Max) @ Ib, Ic 4V @ 2.5A, 10A Current - Collector Cutoff (Max) 700µA DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 3A, 4V Power - Max 3.5W Frequency - Transition - Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-218-3 Supplier Device Package SOT-93 |
Manufacturer Diodes Incorporated Series - Transistor Type NPN Current - Collector (Ic) (Max) 4A Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 320mV @ 200mA, 4A Current - Collector Cutoff (Max) 25nA DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 2A, 2V Power - Max 3W Frequency - Transition 165MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 3-UDFN Supplier Device Package DFN2020B-3 |
Manufacturer Infineon Technologies Series - Transistor Type PNP Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 30V Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA Current - Collector Cutoff (Max) 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V Power - Max 330mW Frequency - Transition 250MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 32V Vce Saturation (Max) @ Ib, Ic 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max) 20nA DC Current Gain (hFE) (Min) @ Ic, Vce 380 @ 2mA, 5V Power - Max 350mW Frequency - Transition 125MHz Operating Temperature - Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |
