JAN2N3997
For Reference Only
| Part Number | JAN2N3997 |
| PNEDA Part # | JAN2N3997 |
| Description | TRANS NPN 80V 10A TO111 |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 7,938 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 27 - Dec 2 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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JAN2N3997 Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | JAN2N3997 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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JAN2N3997 Specifications
| Manufacturer | Microsemi Corporation |
| Series | Military, MIL-PRF-19500/374 |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 10A |
| Voltage - Collector Emitter Breakdown (Max) | 80V |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 500mA, 5A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 1A, 2V |
| Power - Max | 2W |
| Frequency - Transition | - |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Stud Mount |
| Package / Case | TO-111-4, Stud |
| Supplier Device Package | TO-111 |
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Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 500mA Voltage - Collector Emitter Breakdown (Max) 60V Vce Saturation (Max) @ Ib, Ic - Current - Collector Cutoff (Max) 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 1V Power - Max 625mW Frequency - Transition 250MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
Manufacturer Microsemi Corporation Series * Transistor Type - Current - Collector (Ic) (Max) - Voltage - Collector Emitter Breakdown (Max) - Vce Saturation (Max) @ Ib, Ic - Current - Collector Cutoff (Max) - DC Current Gain (hFE) (Min) @ Ic, Vce - Power - Max - Frequency - Transition - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
