JAN2N3637L
For Reference Only
| Part Number | JAN2N3637L |
| PNEDA Part # | JAN2N3637L |
| Description | TRANS PNP 175V 1A |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 5,184 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 2 - Apr 7 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
JAN2N3637L Resources
| Brand | Microsemi |
| ECAD Module |
|
| Mfr. Part Number | JAN2N3637L |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- JAN2N3637L Datasheet
- where to find JAN2N3637L
- Microsemi
- Microsemi JAN2N3637L
- JAN2N3637L PDF Datasheet
- JAN2N3637L Stock
- JAN2N3637L Pinout
- Datasheet JAN2N3637L
- JAN2N3637L Supplier
- Microsemi Distributor
- JAN2N3637L Price
- JAN2N3637L Distributor
JAN2N3637L Specifications
| Manufacturer | Microsemi Corporation |
| Series | Military, MIL-PRF-19500/357 |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 1A |
| Voltage - Collector Emitter Breakdown (Max) | 175V |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 10V |
| Power - Max | 1W |
| Frequency - Transition | - |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Supplier Device Package | TO-5 |
The Products You May Be Interested In
|
Manufacturer Central Semiconductor Corp Series - Transistor Type NPN Current - Collector (Ic) (Max) 10A Voltage - Collector Emitter Breakdown (Max) 60V Vce Saturation (Max) @ Ib, Ic - Current - Collector Cutoff (Max) - DC Current Gain (hFE) (Min) @ Ic, Vce - Power - Max 75W Frequency - Transition 5MHz Operating Temperature - Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220 |
Manufacturer ON Semiconductor Series - Transistor Type NPN - Darlington Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 40V Vce Saturation (Max) @ Ib, Ic 1.5V @ 2mA, 1A Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 4000 @ 1A, 5V Power - Max 1W Frequency - Transition 1GHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Long Body Supplier Device Package TO-92 (TO-226) |
Manufacturer Microsemi Corporation Series * Transistor Type - Current - Collector (Ic) (Max) - Voltage - Collector Emitter Breakdown (Max) - Vce Saturation (Max) @ Ib, Ic - Current - Collector Cutoff (Max) - DC Current Gain (hFE) (Min) @ Ic, Vce - Power - Max - Frequency - Transition - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
Manufacturer ON Semiconductor Series - Transistor Type NPN Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 32V Vce Saturation (Max) @ Ib, Ic 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max) 20nA DC Current Gain (hFE) (Min) @ Ic, Vce 380 @ 2mA, 5V Power - Max 350mW Frequency - Transition 125MHz Operating Temperature - Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 |
Manufacturer ON Semiconductor Series - Transistor Type PNP Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 25V Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 100mA, 1V Power - Max 800mW Frequency - Transition 110MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
