JAN2N3507L
For Reference Only
| Part Number | JAN2N3507L |
| PNEDA Part # | JAN2N3507L |
| Description | TRANS NPN 50V 3A TO5 |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 5,706 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 16 - Mar 21 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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JAN2N3507L Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | JAN2N3507L |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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JAN2N3507L Specifications
| Manufacturer | Microsemi Corporation |
| Series | Military, MIL-PRF-19500/349 |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 3A |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 250mA, 2.5A |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 1.5A, 2V |
| Power - Max | 1W |
| Frequency - Transition | - |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Supplier Device Package | TO-5 |
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Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type NPN Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 6V Power - Max 100mW Frequency - Transition 60MHz Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SC-101, SOT-883 Supplier Device Package CST3 |
Manufacturer Bourns Inc. Series - Transistor Type NPN Current - Collector (Ic) (Max) 25A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 4V @ 5A, 25A Current - Collector Cutoff (Max) 1mA DC Current Gain (hFE) (Min) @ Ic, Vce 5 @ 4V, 25A Power - Max 3W Frequency - Transition - Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-218-3 Supplier Device Package SOT-93 |
Manufacturer Diodes Incorporated Series - Transistor Type NPN Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 30V Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA Current - Collector Cutoff (Max) 15nA DC Current Gain (hFE) (Min) @ Ic, Vce 450 @ 2mA, 5V Power - Max 310mW Frequency - Transition 300MHz Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23 |
Manufacturer ON Semiconductor Series - Transistor Type PNP Current - Collector (Ic) (Max) 3A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 400mV @ 300mA, 3A Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1A, 2V Power - Max 2.1W Frequency - Transition 100MHz Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package DPAK |
