J111_D27Z
For Reference Only
| Part Number | J111_D27Z |
| PNEDA Part # | J111_D27Z |
| Description | JFET N-CH 35V 625MW TO92 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 8,244 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 31 - Apr 5 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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J111_D27Z Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | J111_D27Z |
| Category | Semiconductors › Transistors › Transistors - JFETs |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
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- Orders cannot be canceled after shipping the packages.
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J111_D27Z Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| FET Type | N-Channel |
| Voltage - Breakdown (V(BR)GSS) | 35V |
| Drain to Source Voltage (Vdss) | - |
| Current - Drain (Idss) @ Vds (Vgs=0) | 20mA @ 15V |
| Current Drain (Id) - Max | - |
| Voltage - Cutoff (VGS off) @ Id | 3V @ 1µA |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Resistance - RDS(On) | 30 Ohms |
| Power - Max | 625mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Supplier Device Package | TO-92-3 |
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Manufacturer ON Semiconductor Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) 30V Drain to Source Voltage (Vdss) - Current - Drain (Idss) @ Vds (Vgs=0) 8mA @ 15V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 800mV @ 4nA Input Capacitance (Ciss) (Max) @ Vds 18pF @ 10V (VGS) Resistance - RDS(On) 60 Ohms Power - Max 350mW Operating Temperature - Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Voltage - Breakdown (V(BR)GSS) 30V Drain to Source Voltage (Vdss) - Current - Drain (Idss) @ Vds (Vgs=0) 25mA @ 20V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 2V @ 1nA Input Capacitance (Ciss) (Max) @ Vds 14pF @ 20V Resistance - RDS(On) 60 Ohms Power - Max 625mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - FET Type P-Channel Voltage - Breakdown (V(BR)GSS) 30V Drain to Source Voltage (Vdss) - Current - Drain (Idss) @ Vds (Vgs=0) 5mA @ 20V Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id 5V @ 1µA Input Capacitance (Ciss) (Max) @ Vds 45pF @ 15V Resistance - RDS(On) 150 Ohms Power - Max 350mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
