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J108_D26Z

J108_D26Z

For Reference Only

Part Number J108_D26Z
PNEDA Part # J108_D26Z
Description JFET N-CH 25V 625MW TO92
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,362
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

J108_D26Z Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberJ108_D26Z
CategorySemiconductorsTransistorsTransistors - JFETs
Datasheet
J108_D26Z, J108_D26Z Datasheet (Total Pages: 7, Size: 129.73 KB)
PDFJ108_D74Z Datasheet Cover
J108_D74Z Datasheet Page 2 J108_D74Z Datasheet Page 3 J108_D74Z Datasheet Page 4 J108_D74Z Datasheet Page 5 J108_D74Z Datasheet Page 6 J108_D74Z Datasheet Page 7

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J108_D26Z Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
Voltage - Breakdown (V(BR)GSS)25V
Drain to Source Voltage (Vdss)-
Current - Drain (Idss) @ Vds (Vgs=0)80mA @ 15V
Current Drain (Id) - Max-
Voltage - Cutoff (VGS off) @ Id3V @ 10nA
Input Capacitance (Ciss) (Max) @ Vds-
Resistance - RDS(On)8 Ohms
Power - Max625mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device PackageTO-92-3

The Products You May Be Interested In

Manufacturer

NXP USA Inc.

Series

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FET Type

2 N-Channel (Dual)

Voltage - Breakdown (V(BR)GSS)

25V

Drain to Source Voltage (Vdss)

25V

Current - Drain (Idss) @ Vds (Vgs=0)

24mA @ 10V

Current Drain (Id) - Max

-

Voltage - Cutoff (VGS off) @ Id

2V @ 1µA

Input Capacitance (Ciss) (Max) @ Vds

5pF @ 10V

Resistance - RDS(On)

50 Ohms

Power - Max

190mW

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

6-TSSOP

PN4092_D27Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Voltage - Breakdown (V(BR)GSS)

40V

Drain to Source Voltage (Vdss)

-

Current - Drain (Idss) @ Vds (Vgs=0)

15mA @ 20V

Current Drain (Id) - Max

-

Voltage - Cutoff (VGS off) @ Id

2V @ 1nA

Input Capacitance (Ciss) (Max) @ Vds

16pF @ 20V

Resistance - RDS(On)

50 Ohms

Power - Max

625mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3

Manufacturer

NXP USA Inc.

Series

-

FET Type

N-Channel

Voltage - Breakdown (V(BR)GSS)

25V

Drain to Source Voltage (Vdss)

25V

Current - Drain (Idss) @ Vds (Vgs=0)

12mA @ 10V

Current Drain (Id) - Max

-

Voltage - Cutoff (VGS off) @ Id

1V @ 1µA

Input Capacitance (Ciss) (Max) @ Vds

5pF @ 10V

Resistance - RDS(On)

50 Ohms

Power - Max

250mW

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SOT-23 (TO-236AB)

2N5638

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Voltage - Breakdown (V(BR)GSS)

30V

Drain to Source Voltage (Vdss)

-

Current - Drain (Idss) @ Vds (Vgs=0)

50mA @ 20V

Current Drain (Id) - Max

-

Voltage - Cutoff (VGS off) @ Id

-

Input Capacitance (Ciss) (Max) @ Vds

10pF @ 12V (VGS)

Resistance - RDS(On)

30 Ohms

Power - Max

350mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3

PN4393_D27Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Voltage - Breakdown (V(BR)GSS)

30V

Drain to Source Voltage (Vdss)

-

Current - Drain (Idss) @ Vds (Vgs=0)

5mA @ 20V

Current Drain (Id) - Max

-

Voltage - Cutoff (VGS off) @ Id

500mV @ 1nA

Input Capacitance (Ciss) (Max) @ Vds

14pF @ 20V

Resistance - RDS(On)

100 Ohms

Power - Max

625mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

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