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IXYX30N170CV1

IXYX30N170CV1

For Reference Only

Part Number IXYX30N170CV1
PNEDA Part # IXYX30N170CV1
Description 1700V/108A HIGH VOLTAGE XPT IGB
Manufacturer IXYS
Unit Price Request a Quote
In Stock 17,988
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 2 - Apr 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXYX30N170CV1 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXYX30N170CV1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXYX30N170CV1, IXYX30N170CV1 Datasheet (Total Pages: 7, Size: 238.04 KB)
PDFIXYX30N170CV1 Datasheet Cover
IXYX30N170CV1 Datasheet Page 2 IXYX30N170CV1 Datasheet Page 3 IXYX30N170CV1 Datasheet Page 4 IXYX30N170CV1 Datasheet Page 5 IXYX30N170CV1 Datasheet Page 6 IXYX30N170CV1 Datasheet Page 7

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IXYX30N170CV1 Specifications

ManufacturerIXYS
SeriesXPT™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1700V
Current - Collector (Ic) (Max)108A
Current - Collector Pulsed (Icm)255A
Vce(on) (Max) @ Vge, Ic3.7V @ 15V, 30A
Power - Max937W
Switching Energy5.9mJ (on), 3.3mJ (off)
Input TypeStandard
Gate Charge140nC
Td (on/off) @ 25°C28ns/150ns
Test Condition850V, 30A, 2.7Ohm, 15V
Reverse Recovery Time (trr)160ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackagePLUS247™-3

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

40A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

150W

Switching Energy

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Input Type

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Gate Charge

57nC

Td (on/off) @ 25°C

30ns/148ns

Test Condition

960V, 15A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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Microsemi

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

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Package / Case

TO-264-3, TO-264AA

Supplier Device Package

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Infineon Technologies

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

350µJ (on), 825µJ (off)

Input Type

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Gate Charge

102nC

Td (on/off) @ 25°C

46ns/185ns

Test Condition

400V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

IRGB4640DPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

65A

Current - Collector Pulsed (Icm)

72A

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 24A

Power - Max

250W

Switching Energy

115µJ (on), 600µJ (off)

Input Type

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Gate Charge

75nC

Td (on/off) @ 25°C

41ns/104ns

Test Condition

400V, 24A, 10Ohm, 15V

Reverse Recovery Time (trr)

89ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

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