IXYP20N65C3D1
For Reference Only
| Part Number | IXYP20N65C3D1 |
| PNEDA Part # | IXYP20N65C3D1 |
| Description | IGBT 650V 18A 50W TO220 |
| Manufacturer | IXYS |
| Unit Price | Request a Quote |
| In Stock | 5,796 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 4 - Apr 9 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IXYP20N65C3D1 Resources
| Brand | IXYS |
| ECAD Module |
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| Mfr. Part Number | IXYP20N65C3D1 |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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IXYP20N65C3D1 Specifications
| Manufacturer | IXYS |
| Series | GenX3™, XPT™ |
| IGBT Type | PT |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Current - Collector (Ic) (Max) | 50A |
| Current - Collector Pulsed (Icm) | 105A |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 20A |
| Power - Max | 200W |
| Switching Energy | 430µJ (on), 350µJ (off) |
| Input Type | Standard |
| Gate Charge | 30nC |
| Td (on/off) @ 25°C | 19ns/80ns |
| Test Condition | 400V, 20A, 20Ohm, 15V |
| Reverse Recovery Time (trr) | 135ns |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220AB |
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Manufacturer Infineon Technologies Series - IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 41A Current - Collector Pulsed (Icm) 112A Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 30A Power - Max 250W Switching Energy 1.29mJ Input Type Standard Gate Charge 140nC Td (on/off) @ 25°C 44ns/291ns Test Condition 400V, 30A, 11Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package PG-TO247-3 |
Manufacturer Infineon Technologies Series - IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 22A Current - Collector Pulsed (Icm) 44A Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 10A Power - Max 156W Switching Energy 140µJ (on), 250µJ (off) Input Type Standard Gate Charge 38nC Td (on/off) @ 25°C 30ns/230ns Test Condition 400V, 10A, 47Ohm, 15V Reverse Recovery Time (trr) 90ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package D2PAK |
Manufacturer Infineon Technologies Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 23A Current - Collector Pulsed (Icm) 92A Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 12A Power - Max 100W Switching Energy 130µJ (on), 130µJ (off) Input Type Standard Gate Charge 51nC Td (on/off) @ 25°C 25ns/99ns Test Condition 480V, 12A, 23Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB |
