IXYP20N65C3D1
For Reference Only
| Part Number | IXYP20N65C3D1 |
| PNEDA Part # | IXYP20N65C3D1 |
| Description | IGBT 650V 18A 50W TO220 |
| Manufacturer | IXYS |
| Unit Price | Request a Quote |
| In Stock | 5,796 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 23 - Nov 28 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IXYP20N65C3D1 Resources
| Brand | IXYS |
| ECAD Module |
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| Mfr. Part Number | IXYP20N65C3D1 |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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IXYP20N65C3D1 Specifications
| Manufacturer | IXYS |
| Series | GenX3™, XPT™ |
| IGBT Type | PT |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Current - Collector (Ic) (Max) | 50A |
| Current - Collector Pulsed (Icm) | 105A |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 20A |
| Power - Max | 200W |
| Switching Energy | 430µJ (on), 350µJ (off) |
| Input Type | Standard |
| Gate Charge | 30nC |
| Td (on/off) @ 25°C | 19ns/80ns |
| Test Condition | 400V, 20A, 20Ohm, 15V |
| Reverse Recovery Time (trr) | 135ns |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220AB |
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Manufacturer STMicroelectronics Series PowerMESH™ IGBT Type - Voltage - Collector Emitter Breakdown (Max) 1300V Current - Collector (Ic) (Max) 55A Current - Collector Pulsed (Icm) 125A Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 20A Power - Max 180W Switching Energy 3.4mJ (off) Input Type Standard Gate Charge 127nC Td (on/off) @ 25°C -/284ns Test Condition 960V, 20A, 10Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247 |
Manufacturer IXYS Series GenX3™, XPT™ IGBT Type - Voltage - Collector Emitter Breakdown (Max) 900V Current - Collector (Ic) (Max) 20A Current - Collector Pulsed (Icm) 48A Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 8A Power - Max 125W Switching Energy 460µJ (on), 180µJ (off) Input Type Standard Gate Charge 13.3nC Td (on/off) @ 25°C 16ns/40ns Test Condition 450V, 8A, 30Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature - Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB |
Manufacturer Infineon Technologies Series - IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 41A Current - Collector Pulsed (Icm) 112A Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 30A Power - Max 250W Switching Energy 1.29mJ Input Type Standard Gate Charge 140nC Td (on/off) @ 25°C 44ns/291ns Test Condition 400V, 30A, 11Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package PG-TO247-3 |
