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IXYP15N65C3D1

IXYP15N65C3D1

For Reference Only

Part Number IXYP15N65C3D1
PNEDA Part # IXYP15N65C3D1
Description IGBT 650V 38A 200W TO220
Manufacturer IXYS
Unit Price Request a Quote
In Stock 2,412
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXYP15N65C3D1 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXYP15N65C3D1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXYP15N65C3D1, IXYP15N65C3D1 Datasheet (Total Pages: 6, Size: 214.64 KB)
PDFIXYP15N65C3D1 Datasheet Cover
IXYP15N65C3D1 Datasheet Page 2 IXYP15N65C3D1 Datasheet Page 3 IXYP15N65C3D1 Datasheet Page 4 IXYP15N65C3D1 Datasheet Page 5 IXYP15N65C3D1 Datasheet Page 6

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IXYP15N65C3D1 Specifications

ManufacturerIXYS
SeriesGenX3™, XPT™
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)38A
Current - Collector Pulsed (Icm)80A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 15A
Power - Max200W
Switching Energy270µJ (on), 230µJ (off)
Input TypeStandard
Gate Charge19nC
Td (on/off) @ 25°C15ns/68ns
Test Condition400V, 15A, 20Ohm, 15V
Reverse Recovery Time (trr)110ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220AB

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Switching Energy

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

600V, 40A, 39Ohm, 15V

Reverse Recovery Time (trr)

180ns

Operating Temperature

-55°C ~ 150°C (TJ)

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Through Hole

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