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IXYN75N65C3D1

IXYN75N65C3D1

For Reference Only

Part Number IXYN75N65C3D1
PNEDA Part # IXYN75N65C3D1
Description IGBT
Manufacturer IXYS
Unit Price Request a Quote
In Stock 2,100
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 25 - Apr 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXYN75N65C3D1 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXYN75N65C3D1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IXYN75N65C3D1 Specifications

ManufacturerIXYS
SeriesXPT™, GenX3™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)150A
Current - Collector Pulsed (Icm)360A
Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 60A
Power - Max600W
Switching Energy2mJ (on), 950µJ (off)
Input TypeStandard
Gate Charge122nC
Td (on/off) @ 25°C26ns/93ns
Test Condition400V, 60A, 3Ohm, 15V
Reverse Recovery Time (trr)65ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeChassis Mount
Package / CaseSOT-227-4, miniBLOC
Supplier Device PackageSOT-227B

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Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 175°C (TJ)

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

360V, 100A, 1Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

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24-PowerSMD, 21 Leads

Supplier Device Package

24-SMPD

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Series

GenX3™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

360A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 40A

Power - Max

380W

Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

480V, 40A, 3Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

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TO-247-3

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