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IXYK200N65B3

IXYK200N65B3

For Reference Only

Part Number IXYK200N65B3
PNEDA Part # IXYK200N65B3
Description IGBT
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,292
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXYK200N65B3 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXYK200N65B3
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IXYK200N65B3 Specifications

ManufacturerIXYS
SeriesXPT™, GenX3™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)410A
Current - Collector Pulsed (Icm)1100A
Vce(on) (Max) @ Vge, Ic1.7V @ 15V, 100A
Power - Max1560W
Switching Energy5mJ (on), 4mJ (off)
Input TypeStandard
Gate Charge340nC
Td (on/off) @ 25°C60ns/370ns
Test Condition400V, 100A, 0Ohm, 15V
Reverse Recovery Time (trr)108ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-264-3, TO-264AA
Supplier Device PackageTO-264

The Products You May Be Interested In

Manufacturer

IXYS

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 40A

Power - Max

280W

Switching Energy

1.8mJ (off)

Input Type

Standard

Gate Charge

190nC

Td (on/off) @ 25°C

50ns/110ns

Test Condition

480V, 40A, 2.7Ohm, 15V

Reverse Recovery Time (trr)

35ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA

Supplier Device Package

TO-264AA(IXSK)

Manufacturer

IXYS

Series

GenX3™, XPT™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

86A

Current - Collector Pulsed (Icm)

180A

Vce(on) (Max) @ Vge, Ic

2.9V @ 15V, 40A

Power - Max

480W

Switching Energy

2.7mJ (on), 1.6mJ (off)

Input Type

Standard

Gate Charge

87nC

Td (on/off) @ 25°C

22ns/177ns

Test Condition

600V, 40A, 10Ohm, 15V

Reverse Recovery Time (trr)

100ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247 (IXYH)

SLA5227

Sanken

Manufacturer

Sanken

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

30A

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

-

Power - Max

-

Switching Energy

-

Input Type

Standard

Gate Charge

-

Td (on/off) @ 25°C

-

Test Condition

-

Reverse Recovery Time (trr)

-

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

12-SIP

Supplier Device Package

12-SIP w/fin

IRGP4263-EPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

90A

Current - Collector Pulsed (Icm)

192A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 48A

Power - Max

300W

Switching Energy

1.7mJ (on), 1mJ (off)

Input Type

Standard

Gate Charge

150nC

Td (on/off) @ 25°C

70ns/140ns

Test Condition

400V, 48A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD

APT15GP60BDQ1G

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS 7®

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

56A

Current - Collector Pulsed (Icm)

65A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 15A

Power - Max

250W

Switching Energy

130µJ (on), 120µJ (off)

Input Type

Standard

Gate Charge

55nC

Td (on/off) @ 25°C

8ns/29ns

Test Condition

400V, 15A, 5Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247 [B]

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