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IXYK200N65B3

IXYK200N65B3

For Reference Only

Part Number IXYK200N65B3
PNEDA Part # IXYK200N65B3
Description IGBT
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,292
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXYK200N65B3 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXYK200N65B3
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IXYK200N65B3 Specifications

ManufacturerIXYS
SeriesXPT™, GenX3™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)410A
Current - Collector Pulsed (Icm)1100A
Vce(on) (Max) @ Vge, Ic1.7V @ 15V, 100A
Power - Max1560W
Switching Energy5mJ (on), 4mJ (off)
Input TypeStandard
Gate Charge340nC
Td (on/off) @ 25°C60ns/370ns
Test Condition400V, 100A, 0Ohm, 15V
Reverse Recovery Time (trr)108ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-264-3, TO-264AA
Supplier Device PackageTO-264

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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-55°C ~ 150°C (TJ)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

400V, 150A, 1Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

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TO-247-3 Variant

Supplier Device Package

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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2.7mJ (on), 1.6mJ (off)

Input Type

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Gate Charge

87nC

Td (on/off) @ 25°C

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Test Condition

600V, 40A, 10Ohm, 15V

Reverse Recovery Time (trr)

100ns

Operating Temperature

-55°C ~ 150°C (TJ)

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TO-247-3

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TO-247 (IXYH)

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