IXYH50N65C3D1
For Reference Only
| Part Number | IXYH50N65C3D1 |
| PNEDA Part # | IXYH50N65C3D1 |
| Description | IGBT |
| Manufacturer | IXYS |
| Unit Price | Request a Quote |
| In Stock | 5,958 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 17 - Mar 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IXYH50N65C3D1 Resources
| Brand | IXYS |
| ECAD Module |
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| Mfr. Part Number | IXYH50N65C3D1 |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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IXYH50N65C3D1 Specifications
| Manufacturer | IXYS |
| Series | XPT™, GenX3™ |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Current - Collector (Ic) (Max) | 132A |
| Current - Collector Pulsed (Icm) | 250A |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 36A |
| Power - Max | 600W |
| Switching Energy | 800µJ (on), 800µJ (off) |
| Input Type | Standard |
| Gate Charge | 86nC |
| Td (on/off) @ 25°C | 20ns/90ns |
| Test Condition | 400V, 36A, 5Ohm, 15V |
| Reverse Recovery Time (trr) | 36ns |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 |
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Manufacturer Renesas Electronics America Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 80A Current - Collector Pulsed (Icm) 160A Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 40A Power - Max 260.4W Switching Energy - Input Type Standard Gate Charge 74nC Td (on/off) @ 25°C 53ns/90ns Test Condition 400V, 30A, 5Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-3P-3, SC-65-3 Supplier Device Package TO-3P |
Manufacturer STMicroelectronics Series PowerMESH™ IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 25A Current - Collector Pulsed (Icm) - Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 7A Power - Max 80W Switching Energy 82µJ (on), 155µJ (off) Input Type Standard Gate Charge 34.4nC Td (on/off) @ 25°C 22.5ns/116ns Test Condition 390V, 7A, 10Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package DPAK |
Manufacturer Infineon Technologies Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 11A Current - Collector Pulsed (Icm) 22A Vce(on) (Max) @ Vge, Ic 4.3V @ 15V, 5A Power - Max 60W Switching Energy 450µJ (on), 440µJ (off) Input Type Standard Gate Charge 28nC Td (on/off) @ 25°C 23ns/93ns Test Condition 960V, 5A, 50Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package TO-262 |
