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IXYH50N120C3D1

IXYH50N120C3D1

For Reference Only

Part Number IXYH50N120C3D1
PNEDA Part # IXYH50N120C3D1
Description IGBT 1200V 90A 625W TO247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 84,924
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXYH50N120C3D1 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXYH50N120C3D1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXYH50N120C3D1, IXYH50N120C3D1 Datasheet (Total Pages: 7, Size: 172.22 KB)
PDFIXYH50N120C3D1 Datasheet Cover
IXYH50N120C3D1 Datasheet Page 2 IXYH50N120C3D1 Datasheet Page 3 IXYH50N120C3D1 Datasheet Page 4 IXYH50N120C3D1 Datasheet Page 5 IXYH50N120C3D1 Datasheet Page 6 IXYH50N120C3D1 Datasheet Page 7

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IXYH50N120C3D1 Specifications

ManufacturerIXYS
SeriesGenX3™, XPT™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)90A
Current - Collector Pulsed (Icm)210A
Vce(on) (Max) @ Vge, Ic4V @ 15V, 50A
Power - Max625W
Switching Energy3mJ (on), 1mJ (off)
Input TypeStandard
Gate Charge142nC
Td (on/off) @ 25°C28ns/133ns
Test Condition600V, 50A, 5Ohm, 15V
Reverse Recovery Time (trr)195ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247 (IXYH)

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

180A

Vce(on) (Max) @ Vge, Ic

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Power - Max

300W

Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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STMicroelectronics

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Td (on/off) @ 25°C

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Test Condition

600V, 15A, 10Ohm, 15V

Reverse Recovery Time (trr)

231ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

50W

Switching Energy

30µJ (on), 58µJ (off)

Input Type

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Gate Charge

14nC

Td (on/off) @ 25°C

14ns/33ns

Test Condition

480V, 3A, 10Ohm, 15V

Reverse Recovery Time (trr)

45ns

Operating Temperature

150°C (TJ)

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TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

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Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

330ns/700ns

Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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