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IXYH12N250CV1HV

IXYH12N250CV1HV

For Reference Only

Part Number IXYH12N250CV1HV
PNEDA Part # IXYH12N250CV1HV
Description IGBT 2500V 28A TO247HV
Manufacturer IXYS
Unit Price Request a Quote
In Stock 2,466
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 20 - Apr 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXYH12N250CV1HV Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXYH12N250CV1HV
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXYH12N250CV1HV, IXYH12N250CV1HV Datasheet (Total Pages: 7, Size: 216.59 KB)
PDFIXYH12N250CV1HV Datasheet Cover
IXYH12N250CV1HV Datasheet Page 2 IXYH12N250CV1HV Datasheet Page 3 IXYH12N250CV1HV Datasheet Page 4 IXYH12N250CV1HV Datasheet Page 5 IXYH12N250CV1HV Datasheet Page 6 IXYH12N250CV1HV Datasheet Page 7

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IXYH12N250CV1HV Specifications

ManufacturerIXYS
SeriesXPT™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)2500V
Current - Collector (Ic) (Max)28A
Current - Collector Pulsed (Icm)80A
Vce(on) (Max) @ Vge, Ic4.5V @ 15V, 12A
Power - Max310W
Switching Energy3.56mJ (on), 1.7mJ (off)
Input TypeStandard
Gate Charge56nC
Td (on/off) @ 25°C12ns/167ns
Test Condition1250V, 12A, 10Ohm, 15V
Reverse Recovery Time (trr)16ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247 (IXYH)

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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Test Condition

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Operating Temperature

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Alpha & Omega Semiconductor

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Td (on/off) @ 25°C

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Test Condition

400V, 40A, 7.5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

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ON Semiconductor

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Input Type

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Gate Charge

220nC

Td (on/off) @ 25°C

100ns/237ns

Test Condition

400V, 50A, 10Ohm, 15V

Reverse Recovery Time (trr)

94ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247-3

IRGIB10B60KD1P

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

16A

Current - Collector Pulsed (Icm)

32A

Vce(on) (Max) @ Vge, Ic

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Power - Max

44W

Switching Energy

156µJ (on), 165µJ (off)

Input Type

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Gate Charge

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Td (on/off) @ 25°C

25ns/180ns

Test Condition

400V, 10A, 50Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

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