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IXYH12N250C

IXYH12N250C

For Reference Only

Part Number IXYH12N250C
PNEDA Part # IXYH12N250C
Description IGBT 2500V 28A TO247AD
Manufacturer IXYS
Unit Price Request a Quote
In Stock 2,682
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 1 - Apr 6 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXYH12N250C Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXYH12N250C
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXYH12N250C, IXYH12N250C Datasheet (Total Pages: 6, Size: 204.46 KB)
PDFIXYH12N250C Datasheet Cover
IXYH12N250C Datasheet Page 2 IXYH12N250C Datasheet Page 3 IXYH12N250C Datasheet Page 4 IXYH12N250C Datasheet Page 5 IXYH12N250C Datasheet Page 6

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IXYH12N250C Specifications

ManufacturerIXYS
SeriesXPT™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)2500V
Current - Collector (Ic) (Max)28A
Current - Collector Pulsed (Icm)80A
Vce(on) (Max) @ Vge, Ic4.5V @ 15V, 12A
Power - Max310W
Switching Energy3.56mJ (on), 1.7mJ (off)
Input TypeStandard
Gate Charge56nC
Td (on/off) @ 25°C12ns/167ns
Test Condition1250V, 12A, 10Ohm, 15V
Reverse Recovery Time (trr)16ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247AD

The Products You May Be Interested In

Manufacturer

IXYS

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

-

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

-

Power - Max

-

Switching Energy

-

Input Type

Standard

Gate Charge

-

Td (on/off) @ 25°C

-

Test Condition

-

Reverse Recovery Time (trr)

-

Operating Temperature

-

Mounting Type

Through Hole

Package / Case

ISOPLUS247™

Supplier Device Package

ISOPLUS247™

IRGB5B120KDPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

12A

Current - Collector Pulsed (Icm)

24A

Vce(on) (Max) @ Vge, Ic

3V @ 15V, 6A

Power - Max

89W

Switching Energy

390µJ (on), 330µJ (off)

Input Type

Standard

Gate Charge

25nC

Td (on/off) @ 25°C

22ns/100ns

Test Condition

600V, 6A, 50Ohm, 15V

Reverse Recovery Time (trr)

160ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

Manufacturer

IXYS

Series

XPT™, GenX3™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

180A

Vce(on) (Max) @ Vge, Ic

2.35V @ 15V, 40A

Power - Max

300W

Switching Energy

830µJ (on), 650µJ (off)

Input Type

Standard

Gate Charge

66nC

Td (on/off) @ 25°C

23ns/110ns

Test Condition

400V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr)

40ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-3P-3, SC-65-3

Supplier Device Package

TO-3P

Manufacturer

IXYS

Series

HiPerFAST™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

300A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 50A

Power - Max

250W

Switching Energy

490µJ (off)

Input Type

Standard

Gate Charge

140nC

Td (on/off) @ 25°C

18ns/95ns

Test Condition

400V, 50A, 2Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

ISOPLUS247™

Supplier Device Package

ISOPLUS247™

APT45GR65B

Microsemi

Manufacturer

Microsemi Corporation

Series

-

IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

92A

Current - Collector Pulsed (Icm)

168A

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 45A

Power - Max

357W

Switching Energy

900µJ (on), 580µJ (off)

Input Type

Standard

Gate Charge

203nC

Td (on/off) @ 25°C

15ns/100ns

Test Condition

433V, 45A, 4.3Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247

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