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IXYH10N170CV1

IXYH10N170CV1

For Reference Only

Part Number IXYH10N170CV1
PNEDA Part # IXYH10N170CV1
Description IGBT 1.7KV 36A TO247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,248
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXYH10N170CV1 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXYH10N170CV1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXYH10N170CV1, IXYH10N170CV1 Datasheet (Total Pages: 7, Size: 214.95 KB)
PDFIXYH10N170CV1 Datasheet Cover
IXYH10N170CV1 Datasheet Page 2 IXYH10N170CV1 Datasheet Page 3 IXYH10N170CV1 Datasheet Page 4 IXYH10N170CV1 Datasheet Page 5 IXYH10N170CV1 Datasheet Page 6 IXYH10N170CV1 Datasheet Page 7

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IXYH10N170CV1 Specifications

ManufacturerIXYS
SeriesXPT™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1700V
Current - Collector (Ic) (Max)36A
Current - Collector Pulsed (Icm)84A
Vce(on) (Max) @ Vge, Ic3.8V @ 15V, 10A
Power - Max280W
Switching Energy1.4mJ (on), 700µJ (off)
Input TypeStandard
Gate Charge46nC
Td (on/off) @ 25°C14ns/130ns
Test Condition850V, 10A, 10Ohm, 15V
Reverse Recovery Time (trr)160ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247 (IXYH)

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Voltage - Collector Emitter Breakdown (Max)

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Td (on/off) @ 25°C

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Test Condition

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Toshiba Semiconductor and Storage

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Infineon Technologies

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Infineon Technologies

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

90A

Vce(on) (Max) @ Vge, Ic

2.02V @ 15V, 30A

Power - Max

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Switching Energy

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Input Type

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Gate Charge

234nC

Td (on/off) @ 25°C

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Test Condition

600V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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