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IXYA8N250CHV

IXYA8N250CHV

For Reference Only

Part Number IXYA8N250CHV
PNEDA Part # IXYA8N250CHV
Description IGBT
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,552
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 6 - Apr 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXYA8N250CHV Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXYA8N250CHV
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IXYA8N250CHV Specifications

ManufacturerIXYS
SeriesXPT™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)2500V
Current - Collector (Ic) (Max)29A
Current - Collector Pulsed (Icm)70A
Vce(on) (Max) @ Vge, Ic4V @ 15V, 8A
Power - Max280W
Switching Energy2.6mJ (on), 1.07mJ (off)
Input TypeStandard
Gate Charge45nC
Td (on/off) @ 25°C11ns/180ns
Test Condition1250V, 8A, 15Ohm, 15V
Reverse Recovery Time (trr)5ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263HV

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

60A

Vce(on) (Max) @ Vge, Ic

2.9V @ 15V, 30A

Power - Max

200W

Switching Energy

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Input Type

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Gate Charge

120nC

Td (on/off) @ 25°C

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Test Condition

600V, 30A, 47Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

100A

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 50A

Power - Max

150W

Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

75ns/300ns

Test Condition

300V, 50A, 39Ohm, 15V

Reverse Recovery Time (trr)

300ns

Operating Temperature

150°C (TJ)

Mounting Type

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Supplier Device Package

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ON Semiconductor

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

21A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

150W

Switching Energy

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

300V, 1kOhm, 5V

Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

TO-252AA

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STMicroelectronics

Manufacturer

STMicroelectronics

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

30A

Current - Collector Pulsed (Icm)

60A

Vce(on) (Max) @ Vge, Ic

2.6V @ 15V, 15A

Power - Max

259W

Switching Energy

380µJ (on), 370µJ (off)

Input Type

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Gate Charge

67nC

Td (on/off) @ 25°C

23ns/111ns

Test Condition

600V, 15A, 10Ohm, 15V

Reverse Recovery Time (trr)

231ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247-3

APT20GF120BRDQ1G

Microsemi

Manufacturer

Microsemi Corporation

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

64A

Vce(on) (Max) @ Vge, Ic

3.2V @ 15V, 15A

Power - Max

200W

Switching Energy

895µJ (on), 840µJ (off)

Input Type

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Gate Charge

100nC

Td (on/off) @ 25°C

10ns/120ns

Test Condition

800V, 15A, 4.3Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

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