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IXXP50N60B3

IXXP50N60B3

For Reference Only

Part Number IXXP50N60B3
PNEDA Part # IXXP50N60B3
Description IGBT
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,208
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 21 - Apr 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXXP50N60B3 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXXP50N60B3
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IXXP50N60B3 Specifications

ManufacturerIXYS
SeriesXPT™, GenX3™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)120A
Current - Collector Pulsed (Icm)200A
Vce(on) (Max) @ Vge, Ic1.8V @ 15V, 36A
Power - Max600W
Switching Energy670µJ (on), 1.2mJ (off)
Input TypeStandard
Gate Charge70nC
Td (on/off) @ 25°C27ns/150ns
Test Condition360V, 36A, 5Ohm, 15V
Reverse Recovery Time (trr)40ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220AB

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Td (on/off) @ 25°C

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Reverse Recovery Time (trr)

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Operating Temperature

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Package / Case

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