IXXH30N65C4D1
For Reference Only
| Part Number | IXXH30N65C4D1 |
| PNEDA Part # | IXXH30N65C4D1 |
| Description | IGBT |
| Manufacturer | IXYS |
| Unit Price | Request a Quote |
| In Stock | 8,442 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 30 - Apr 4 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IXXH30N65C4D1 Resources
| Brand | IXYS |
| ECAD Module |
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| Mfr. Part Number | IXXH30N65C4D1 |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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IXXH30N65C4D1 Specifications
| Manufacturer | IXYS |
| Series | XPT™, GenX4™ |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Current - Collector (Ic) (Max) | 62A |
| Current - Collector Pulsed (Icm) | 136A |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 30A |
| Power - Max | 230W |
| Switching Energy | 1.1mJ (on), 400µJ (off) |
| Input Type | Standard |
| Gate Charge | 47nC |
| Td (on/off) @ 25°C | 20ns/140ns |
| Test Condition | 400V, 30A, 15Ohm, 15V |
| Reverse Recovery Time (trr) | 72ns |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247AD |
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Manufacturer Microsemi Corporation Series POWER MOS 7® IGBT Type PT Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 41A Current - Collector Pulsed (Icm) 50A Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 13A Power - Max 250W Switching Energy 115µJ (on), 165µJ (off) Input Type Standard Gate Charge 55nC Td (on/off) @ 25°C 9ns/28ns Test Condition 600V, 13A, 5Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247 [B] |
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