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IXXH30N65B4D1

IXXH30N65B4D1

For Reference Only

Part Number IXXH30N65B4D1
PNEDA Part # IXXH30N65B4D1
Description IGBT
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,202
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 19 - Apr 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXXH30N65B4D1 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXXH30N65B4D1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IXXH30N65B4D1 Specifications

ManufacturerIXYS
SeriesXPT™, GenX4™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)70A
Current - Collector Pulsed (Icm)146A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 30A
Power - Max230W
Switching Energy1.04mJ (on), 730µJ (off)
Input TypeStandard
Gate Charge52nC
Td (on/off) @ 25°C20ns/150ns
Test Condition400V, 30A, 15Ohm, 15V
Reverse Recovery Time (trr)65ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247AD

The Products You May Be Interested In

Manufacturer

IXYS

Series

GenX3™, XPT™

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

50A

Current - Collector Pulsed (Icm)

105A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 20A

Power - Max

230W

Switching Energy

430µJ (on), 350µJ (off)

Input Type

Standard

Gate Charge

30nC

Td (on/off) @ 25°C

19ns/80ns

Test Condition

400V, 20A, 20Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247 (IXYH)

IXSH45N100

IXYS

Manufacturer

IXYS

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1000V

Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

180A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 45A

Power - Max

300W

Switching Energy

15mJ (off)

Input Type

Standard

Gate Charge

165nC

Td (on/off) @ 25°C

80ns/400ns

Test Condition

800V, 45A, 2.7Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXSH)

IRG4IBC30KD

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

17A

Current - Collector Pulsed (Icm)

34A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 16A

Power - Max

45W

Switching Energy

600µJ (on), 580µJ (off)

Input Type

Standard

Gate Charge

67nC

Td (on/off) @ 25°C

60ns/160ns

Test Condition

480V, 16A, 23Ohm, 15V

Reverse Recovery Time (trr)

42ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220AB Full-Pak

IRG6S330UPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

330V

Current - Collector (Ic) (Max)

70A

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 70A

Power - Max

160W

Switching Energy

-

Input Type

Standard

Gate Charge

86nC

Td (on/off) @ 25°C

39ns/120ns

Test Condition

196V, 25A, 10Ohm

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

D2PAK

RJH60V2BDPP-M0#T2

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

25A

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 12A

Power - Max

34W

Switching Energy

30µJ (on), 180µJ (off)

Input Type

Standard

Gate Charge

32nC

Td (on/off) @ 25°C

33ns/65ns

Test Condition

300V, 12A, 5Ohm, 15V

Reverse Recovery Time (trr)

25ns

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220FL

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