Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXTY3N50P

IXTY3N50P

For Reference Only

Part Number IXTY3N50P
PNEDA Part # IXTY3N50P
Description MOSFET N-CH 500V 3.6A DPAK
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,024
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTY3N50P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTY3N50P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXTY3N50P Datasheet
  • where to find IXTY3N50P
  • IXYS

  • IXYS IXTY3N50P
  • IXTY3N50P PDF Datasheet
  • IXTY3N50P Stock

  • IXTY3N50P Pinout
  • Datasheet IXTY3N50P
  • IXTY3N50P Supplier

  • IXYS Distributor
  • IXTY3N50P Price
  • IXTY3N50P Distributor

IXTY3N50P Specifications

ManufacturerIXYS
SeriesPolarHV™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id5.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs9.3nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds409pF @ 25V
FET Feature-
Power Dissipation (Max)70W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252AA
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

3LN01S-TL-E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

150mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4V

Rds On (Max) @ Id, Vgs

3.7Ohm @ 80mA, 4V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

1.58nC @ 10V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

7pF @ 10V

FET Feature

-

Power Dissipation (Max)

150mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SMCP

Package / Case

TO-236-3, SC-59, SOT-23-3

IXTA72N20T

IXYS

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

72A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (IXTA)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

C3M0120100K

Cree/Wolfspeed

Manufacturer

Cree/Wolfspeed

Series

C3M™

FET Type

N-Channel

Technology

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

22A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

15V

Rds On (Max) @ Id, Vgs

155mOhm @ 15A, 15V

Vgs(th) (Max) @ Id

3.5V @ 3mA

Gate Charge (Qg) (Max) @ Vgs

21.5nC @ 15V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

350pF @ 600V

FET Feature

-

Power Dissipation (Max)

83W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-4L

Package / Case

TO-247-4

IPB13N03LB G

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

12.5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2V @ 20µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1355pF @ 15V

FET Feature

-

Power Dissipation (Max)

52W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SI7455DP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

28A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

25mOhm @ 10.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

155nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5160pF @ 40V

FET Feature

-

Power Dissipation (Max)

5.2W (Ta), 83.3W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

Recently Sold

MAX97220AETE+

MAX97220AETE+

Maxim Integrated

IC AMP AUD.13W STER AB 16TQFN

MBR140SFT1G

MBR140SFT1G

ON Semiconductor

DIODE SCHOTTKY 40V 1A SOD123L

76SB08ST

76SB08ST

Grayhill Inc.

SWITCH ROCKER DIP SPST 150MA 30V

MCP6002-E/SN

MCP6002-E/SN

Microchip Technology

IC OPAMP GP 2 CIRCUIT 8SOIC

CMS15(TE12L,Q,M)

CMS15(TE12L,Q,M)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 60V 3A M-FLAT

XC6SLX100-3CSG484I

XC6SLX100-3CSG484I

Xilinx

IC FPGA 338 I/O 484CSBGA

CDSOT23-T24CAN

CDSOT23-T24CAN

Bourns

TVS DIODE 24V 40V SOT23

BSS84-7-F

BSS84-7-F

Diodes Incorporated

MOSFET P-CH 50V 130MA SOT23-3

FMMT618TA

FMMT618TA

Diodes Incorporated

TRANS NPN 20V 2.5A SOT23-3

MF-R090

MF-R090

Bourns

PTC RESET FUSE 60V 900MA RADIAL

ESD3V3D5B-TP

ESD3V3D5B-TP

Micro Commercial Co

TVS DIODE 3.3V 12V SOD523

TAJB475K016RNJ

TAJB475K016RNJ

CAP TANT 4.7UF 10% 16V 1411