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IXTY1R4N120P

IXTY1R4N120P

For Reference Only

Part Number IXTY1R4N120P
PNEDA Part # IXTY1R4N120P
Description MOSFET N-CH 1200V 1.4A TO-252
Manufacturer IXYS
Unit Price Request a Quote
In Stock 4,158
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTY1R4N120P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTY1R4N120P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IXTY1R4N120P Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252, (D-Pak)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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