Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXTU44N10T

IXTU44N10T

For Reference Only

Part Number IXTU44N10T
PNEDA Part # IXTU44N10T
Description MOSFET N-CH 100V 44A TO-251
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,804
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTU44N10T Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTU44N10T
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXTU44N10T Datasheet
  • where to find IXTU44N10T
  • IXYS

  • IXYS IXTU44N10T
  • IXTU44N10T PDF Datasheet
  • IXTU44N10T Stock

  • IXTU44N10T Pinout
  • Datasheet IXTU44N10T
  • IXTU44N10T Supplier

  • IXYS Distributor
  • IXTU44N10T Price
  • IXTU44N10T Distributor

IXTU44N10T Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C44A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id4.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting TypeThrough Hole
Supplier Device PackageTO-251
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

The Products You May Be Interested In

IXFN48N50

IXYS

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

48A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

100mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

4V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

270nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

8400pF @ 25V

FET Feature

-

Power Dissipation (Max)

520W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227B

Package / Case

SOT-227-4, miniBLOC

STFI10NK60Z

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

750mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

70nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1370pF @ 25V

FET Feature

-

Power Dissipation (Max)

35W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAKFP (TO-281)

Package / Case

TO-262-3 Full Pack, I²Pak

ZVP0545ASTZ

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

450V

Current - Continuous Drain (Id) @ 25°C

45mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

150Ohm @ 50mA, 10V

Vgs(th) (Max) @ Id

4.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

120pF @ 25V

FET Feature

-

Power Dissipation (Max)

700mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

E-Line (TO-92 compatible)

Package / Case

E-Line-3

64-0007

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

150mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

67nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1160pF @ 25V

FET Feature

-

Power Dissipation (Max)

150W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

NTLUS3A39PZTBG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

µCool™

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

39mOhm @ 4A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10.4nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

920pF @ 15V

FET Feature

-

Power Dissipation (Max)

600mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-UDFN (1.6x1.6)

Package / Case

6-PowerUFDFN

Recently Sold

ISL3259EIBZ-T

ISL3259EIBZ-T

Renesas Electronics America Inc.

IC TRANSCEIVER HALF 1/1 8SOIC

TAJA475K016RNJ

TAJA475K016RNJ

CAP TANT 4.7UF 10% 16V 1206

MBR0580-TP

MBR0580-TP

Micro Commercial Co

DIODE SCHOTTKY 80V 500MA SOD123

A6H-8101

A6H-8101

Omron Electronics Inc-EMC Div

SWITCH SLIDE DIP SPST 25MA 24V

74ACT08SC

74ACT08SC

ON Semiconductor

IC GATE AND 4CH 2-INP 14SOIC

MAX3208EAUB+T

MAX3208EAUB+T

Maxim Integrated

TVS DIODE 10UMAX

Q8F1CXXB12E

Q8F1CXXB12E

APEM Inc.

INDICATOR 12V 8MM FLUSH BLUE

S14100038

S14100038

Wurth Electronics

CMC 560UH 20A 2LN TH

SI4946BEY-T1-E3

SI4946BEY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 60V 6.5A 8-SOIC

AD9745BCPZRL

AD9745BCPZRL

Analog Devices

IC DAC 12BIT A-OUT 72LFCSP

SMAJ36CA

SMAJ36CA

Littelfuse

TVS DIODE 36V 58.1V DO214AC

RJH60D5BDPQ-E0#T2

RJH60D5BDPQ-E0#T2

Renesas Electronics America

IGBT 600V 75A 200W TO-247