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IXTT82N25P

IXTT82N25P

For Reference Only

Part Number IXTT82N25P
PNEDA Part # IXTT82N25P
Description MOSFET N-CH 250V 82A TO-268
Manufacturer IXYS
Unit Price Request a Quote
In Stock 4,698
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTT82N25P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTT82N25P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTT82N25P, IXTT82N25P Datasheet (Total Pages: 5, Size: 151.81 KB)
PDFIXTK82N25P Datasheet Cover
IXTK82N25P Datasheet Page 2 IXTK82N25P Datasheet Page 3 IXTK82N25P Datasheet Page 4 IXTK82N25P Datasheet Page 5

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IXTT82N25P Specifications

ManufacturerIXYS
SeriesPolarHT™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25°C82A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs35mOhm @ 41A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs142nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4800pF @ 25V
FET Feature-
Power Dissipation (Max)500W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-268
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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