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IXTT6N120

IXTT6N120

For Reference Only

Part Number IXTT6N120
PNEDA Part # IXTT6N120
Description MOSFET N-CH 1200V 6A TO-268
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,586
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 20 - Apr 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTT6N120 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTT6N120
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTT6N120, IXTT6N120 Datasheet (Total Pages: 4, Size: 588.04 KB)
PDFIXTT6N120 Datasheet Cover
IXTT6N120 Datasheet Page 2 IXTT6N120 Datasheet Page 3 IXTT6N120 Datasheet Page 4

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IXTT6N120 Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.6Ohm @ 3A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs56nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1950pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-268
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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