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IXTQ88N30P

IXTQ88N30P

For Reference Only

Part Number IXTQ88N30P
PNEDA Part # IXTQ88N30P
Description MOSFET N-CH 300V 88A TO-3P
Manufacturer IXYS
Unit Price Request a Quote
In Stock 4,338
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTQ88N30P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTQ88N30P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTQ88N30P, IXTQ88N30P Datasheet (Total Pages: 5, Size: 324.08 KB)
PDFIXTT88N30P Datasheet Cover
IXTT88N30P Datasheet Page 2 IXTT88N30P Datasheet Page 3 IXTT88N30P Datasheet Page 4 IXTT88N30P Datasheet Page 5

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IXTQ88N30P Specifications

ManufacturerIXYS
SeriesPolarHT™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25°C88A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs40mOhm @ 44A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs180nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6300pF @ 25V
FET Feature-
Power Dissipation (Max)600W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

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