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IXTQ50N25T

IXTQ50N25T

For Reference Only

Part Number IXTQ50N25T
PNEDA Part # IXTQ50N25T
Description MOSFET N-CH 250V 50A TO-3P
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,634
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTQ50N25T Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTQ50N25T
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTQ50N25T, IXTQ50N25T Datasheet (Total Pages: 6, Size: 230.2 KB)
PDFIXTH50N25T Datasheet Cover
IXTH50N25T Datasheet Page 2 IXTH50N25T Datasheet Page 3 IXTH50N25T Datasheet Page 4 IXTH50N25T Datasheet Page 5 IXTH50N25T Datasheet Page 6

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IXTQ50N25T Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs60mOhm @ 25A, 10V
Vgs(th) (Max) @ Id5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs78nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds4000pF @ 25V
FET Feature-
Power Dissipation (Max)400W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

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