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IXTQ36N30P

IXTQ36N30P

For Reference Only

Part Number IXTQ36N30P
PNEDA Part # IXTQ36N30P
Description MOSFET N-CH 300V 36A TO-3P
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,568
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTQ36N30P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTQ36N30P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTQ36N30P, IXTQ36N30P Datasheet (Total Pages: 5, Size: 252.12 KB)
PDFIXTQ36N30P Datasheet Cover
IXTQ36N30P Datasheet Page 2 IXTQ36N30P Datasheet Page 3 IXTQ36N30P Datasheet Page 4 IXTQ36N30P Datasheet Page 5

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IXTQ36N30P Specifications

ManufacturerIXYS
SeriesPolarHT™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25°C36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs110mOhm @ 18A, 10V
Vgs(th) (Max) @ Id5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs70nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2250pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

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